Analysis of GAA Tunnel FET using MATLAB
نویسندگان
چکیده
In order to improve the energy efficiency of next generation digital systems, transistors withSubthreshold SlopeReferences Q. Zhang, W. Zhao, and A. Seabaugh, "Low-subthreshold-swing tunnel
منابع مشابه
Asymmetrically strained all-silicon multi-gate n-Tunnel FETs
0038-1101/$ see front matter 2010 Elsevier Ltd. A doi:10.1016/j.sse.2010.04.037 * Corresponding author. Tel.: +41 21 693 5633; fax E-mail address: [email protected] (M This paper reports all-silicon asymmetrically strained Tunnel FET architectures that feature improved subthreshold swing and Ion/Ioff characteristics. We demonstrate that a lateral strain profile corresponding to at leas...
متن کاملAn extensive electrostatic analysis of dual material gate all around tunnel FET (DMGAA-TFET)
In the proposed work an analytical model of a p-channel dual material gate all around tunnel FET (DMGAA-TFET) is presented and its performance is compared with the conventional GAA-TFET. The electrostatic potential profile of the model is obtained using 2-D Laplace’s solution in the cylindrical coordinate system. A quantitative study of the drain current has been carried out using electric fiel...
متن کاملInterface Trap Analysis using Charge Pump Profiling Techniques in Gate-All- Around Silicon Nanowire Field Effect Transistor
This paper present the electron charge pumping technique using the various charge pumps circuits for interface trap density and edge leakage reduction that is major concern in GAA short channel nanowire structure. Latched and bootstrap charge pump circuit has been simulated and analyzed for GAA structure. The charge pumping technique requires body contact of FET which has been implemented for G...
متن کاملPerformance Study and Analysis of Heterojunction Gate All Around Nanowire Tunneling Field Effect Transistor
In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details. The proposed device has been structured using Germanium for source regionand Silicon for channel and drain regions. Kane's band-to-band tunneling model hasbeen used to account for the amount of band-to...
متن کاملRepresentation of the temperature nano-sensors via cylindrical gate-all-around Si-NW-FET
In this paper, the temperature dependence of some characteristics of cylindrical gate-all-around Si nanowire field effect transistor (GAA-Si-NWFET) is investigated to representing the temperature nano-sensor structures and improving their performance. Firstly, we calculate the temperature sensitivity of drain-source current versus the gate-source voltage of GAA-Si-NWFET to propose the temperatu...
متن کامل